VSLB9530S www.vishay.com vishay semiconductors rev. 1.1, 03-sep-13 1 document number: 82564 for technical questions, contact: emittertechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 high speed infrared emitting diode, 940 nm, gaalas, mqw description vslb59530s, is an infrared, 940 nm emitting diode in gaalas multi-quantum well (m qw) technology with high radiant power and high speed. it is molded in a clear high power telux package with an oval lens resulting in angle of half intensities in vertical dire ction of 18 and in horizontal direction of 36. features ? package type: leaded ? package form: telux ? dimensions (l x w x h in mm): 7.62 x 7.62 x 4.6 ? peak wavelength: p = 940 nm ? high reliability ? high radiant power ? high radiant intensity ? angle of half intensity, vertical: ? v = 18 ? angle of half intensity, horizontal: ? h = 36 ? low forward voltage ? suitable for high pulse current operation ? high modulation bandwidth: f c = 24 mhz ? good spectral matching with si photodetectors ? compatible with wave sold er processes according to cecc 00802 ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 applications ? emitter source for gestur e recognition applications ? emitter source for 3d tv ? emitter source for mid range proximity detection ? emitter source for ob ject/presence detection note ? test conditions see table basic characteristics note ? moq: minimum order quantity 19232 product summary component i e (mw/sr) ? v (deg) ? h (deg) p (nm) t r (ns) VSLB9530S 60 18 36 940 15 ordering information ordering code packaging remarks package form VSLB9530S tube moq: 2100 pcs, 70 pcs/tube telux
VSLB9530S www.vishay.com vishay semiconductors rev. 1.1, 03-sep-13 2 document number: 82564 for technical questions, contact: emittertechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - power dissipation limit vs. ambient temperature fig. 2 - forward current limit vs. ambient temperature absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit reverse voltage v r 5v forward current i f 150 ma peak forward current t p /t = 0.5, t p = 100 s i fm 300 ma surge forward current t p = 100 s i fsm 1.5 a power dissi pation p v 232.5 mw junction temperature t j 100 c operating temperature range t amb - 40 to + 95 c storage temperature range t stg - 40 to + 100 c soldering temperature t 5 s, 1.5 mm from body preheat temperature 100 c/30 s t sd 260 c thermal resistance junction/ambient r thja 200 k/w 0 102030405060708090100 t amb - ambient temperature (c) p v - power dissipation (mw) r thja = 200 k/w 0 50 100 150 200 250 0 102030405060708090100 t amb - ambient temperature (c) i f - forward current (ma) r thja = 200 k/w 0 160 140 120 100 80 60 40 20 basic characteristics (t amb = 25 c, unless otherwise specified) parameter test condition symbol min. typ. max. unit forward voltage i f = 100 ma, t p = 20 ms v f 1.05 1.28 1.5 v i f = 150 ma, t p = 20 ms v f 1.31 1.55 v i f = 1.5 a, t p = 100 s v f 1.9 v temperature coefficient of v f i f = 150 ma tk vf - 0.89 mv/k reverse current v r = 5 v i r 10 a junction capacitance v r = 0 v, f = 1 mhz, e = 0 mw/cm 2 c j 86 pf radiant intensity i f = 150 ma, t p = 20 ms i e 40 60 95 mw/sr i f = 1.5 a, t p = 100 s i e 520 mw/sr radiant power i f = 100 ma, t p = 20 ms e 40 mw temperature coefficient of e i f = 150 ma tk e - 0.42 %/k angle of half intensity, vertical ? v 18 deg angle of half intensity, horizontal ? h 36 deg peak wavelength i f = 30 ma p 940 nm spectral bandwidth i f = 30 ma ? 25 nm temperature coefficient of p i f = 30 ma tk p 0.25 nm/k rise time i f = 100 ma, 20 % to 80 % t r 15 ns fall time i f = 100 ma, 20 % to 80 % t f 15 ns cut-off frequency i dc = 70 ma, i ac = 30 ma pp f c 24 mhz
VSLB9530S www.vishay.com vishay semiconductors rev. 1.1, 03-sep-13 3 document number: 82564 for technical questions, contact: emittertechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 basic characteristics (t amb = 25 c, unless otherwise specified) fig. 3 - forward current vs. forward voltage fig. 4 - radiant intensity vs. forward current fig. 5 - forward voltage vs. ambient temperature fig. 6 - relative radiant in tensity vs. ambient temperature fig. 7 - relative radiant power vs. wavelength fig. 8 - relative radiant in tensity vs. angular displacement 0.001 0.1 1 10 0.5 1.0 2.0 v f - forward voltage (v) i f - forward current (ma) 1.5 0.01 t p = 100 s 0.1 10 100 1000 0.001 0.01 0.1 10 i f - forward current (a) i e - radiant intensity (mw/sr) 1 1 t p = 100 s 1.0 1.3 1.4 1.5 - 50 - 25 0 100 t amb - ambient temperature (c) v f - forward voltage (v) 50 1.2 1.1 75 25 t p = 20 ms i f = 150 ma 50 130 140 150 - 50 - 25 0 100 t amb - ambient temperature (c) i e,rel - relative radiant intensity (%) 50 120 110 75 25 t p = 20 ms i f = 150 ma 80 90 100 70 60 0 10 20 30 40 50 60 70 80 90 100 840 880 920 960 1000 1040 - wavelength (nm) 21445 e rel - relative radiant power (%) i f = 30 ma 0.4 0.2 0 i e, rel - relative radiant sensitivity 0.6 0.9 0.8 0 30 10 20 40 50 60 70 80 0.7 1.0 ? - angular displacement horizontal vertical vertical horizontal
VSLB9530S www.vishay.com vishay semiconductors rev. 1.1, 03-sep-13 4 document number: 82564 for technical questions, contact: emittertechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 package dimensions in millimeters
VSLB9530S www.vishay.com vishay semiconductors rev. 1.1, 03-sep-13 5 document number: 82564 for technical questions, contact: emittertechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fan fold box dimensions in millimeters 16491 label 600 45 110 label
VSLB9530S www.vishay.com vishay semiconductors rev. 1.1, 03-sep-13 6 document number: 82564 for technical questions, contact: emittertechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 tube with bar code label dimensions in millimeters drawing-no.: 9.700-5223.0-4 rev. 2; date: 23.08.99 20438
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